Structural, electrical and optical properties of boron doped ZnO thin films using LSMCD method at room temperature

Abstract

Zn(1-x) B (x) O (0a parts per thousand currency signxa parts per thousand currency sign0.04) thin films were deposited by the liquid source misted chemical vapor deposition (LSMCD) method. The thin films were polycrystalline with grain sizes of 16 nm to 22 nm. The structural, optical, and electrical properties were investigated by X-ray diffraction, UV-visible spectrophotometry, Raman spectroscopy, and Hall effect measurement. Also scanning electron (SEM) and atomic force microscopy (AFM) techniques were used in order to determine the morphological and topological characteristics of the films. The optimal result of Zn(1-x) B (x) O films was obtained at x=0.02, with a low resistivity of a parts per thousand 10(-2) Omega cm, and a high transmittancy of 85% in the visible light spectrum (300 nm similar to 800 nm).