Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy

Abstract

We report that a Ni-InGaAs alloy can be used as a source/drain (S/D) metal for InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs), allowing us to employ the salicide-like self-align S/D formation. We also introduce Schottky barrier height (SBH) engineering process by increasing the indium content of InxGa1-xAs channels, which successfully reduces SBH down to zero. We propose a fabrication process for self-aligned metal S/D MOSFETs using Ni-InGaAs and demonstrate successful operation of the metal S/D InxGa1-xAs MOSFETs. The In0.7Ga0.3As MOSFETs exhibit an S/D resistance (R-SD) that is 1/5 lower than that in P-N junction devices and a high peak mobility of 2000 cm(2) V-1 s(-1). (C) 2011 The Japan Society of Applied Physics