In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sang Hyeon | ko |
| dc.contributor.author | Geum, Dae-Myeong | ko |
| dc.contributor.author | Park, Min-Su | ko |
| dc.contributor.author | Choi, Won Jun | ko |
| dc.date.accessioned | 2019-02-20T04:58:21Z | - |
| dc.date.available | 2019-02-20T04:58:21Z | - |
| dc.date.created | 2019-02-07 | - |
| dc.date.issued | 2015-05 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.36, no.5, pp.451 - 453 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/250283 | - |
| dc.description.abstract | In this letter, we have investigated electrical properties of metal-oxide-semiconductor (MOS) gate stack of Pt/Y2O3/In0.53Ga0.47As under different annealing conditions. We have found that proper annealing step significantly improves MOS interfacial properties of Pt/Y2O3/In0.53Ga0.47As MOS capacitors. Finally, we have realized MOS interface with a low density of trap state (D-it) of 4 x 10(12) eV(-1) . cm(-2) and hysteresis of 15 mV using postmetallization annealing at 350 degrees C. Furthermore, we also first demonstrated In0.53Ga0.47As-on-insulator (-OI) transistors with Y2O3 buried oxide layer using developed MOS interface. Fabricated In0.53Ga0.47As-OI transistors show good I-V characteristics and high peak mobility of similar to 2000 cm(2)/Vs. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000353566300010 | - |
| dc.identifier.scopusid | 2-s2.0-84928753371 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 36 | - |
| dc.citation.issue | 5 | - |
| dc.citation.beginningpage | 451 | - |
| dc.citation.endingpage | 453 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/LED.2015.2417872 | - |
| dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
| dc.contributor.nonIdAuthor | Park, Min-Su | - |
| dc.contributor.nonIdAuthor | Choi, Won Jun | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
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