DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Geum, Dae-Myeong | ko |
dc.contributor.author | Shim, Jae-Phil | ko |
dc.contributor.author | Kim, Chang Zoo | ko |
dc.contributor.author | Kim, Hyung-Jun | ko |
dc.contributor.author | Song, Jin Dong | ko |
dc.contributor.author | Choi, Won Jun | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Kim, Dae Hwan | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.contributor.author | Kim, Dong Myong | ko |
dc.date.accessioned | 2019-02-20T04:57:59Z | - |
dc.date.available | 2019-02-20T04:57:59Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2017-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.110, no.4 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250268 | - |
dc.description.abstract | In this work, we fabricated the In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a MOS interface of Y2O3/In0.53Ga0.47As and recessed gate structure. We investigated the interfacial properties of the gate stack and the junction characteristics of the fabricated MOSFETs. Low subthreshold slope (SS = 110mV/dec), high on/off current ratio (I-on/I-off = 10 6), and high effective mobility of 1600 cm(2)/V.s were achieved in the MOSFETs at a sheet charge density (N-s) = 1.2 x 10(12) cm(-2). From the temperature dependence of I-V characteristics, the interface trap density was extracted to be D-it = 2.2 x 10(11) cm(-2).eV(-1) with a negligible trap-assisted leakage current. Published by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density | - |
dc.type | Article | - |
dc.identifier.wosid | 000392837300044 | - |
dc.identifier.scopusid | 2-s2.0-85010471375 | - |
dc.type.rims | ART | - |
dc.citation.volume | 110 | - |
dc.citation.issue | 4 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4974893 | - |
dc.contributor.nonIdAuthor | Kim, Seong Kwang | - |
dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
dc.contributor.nonIdAuthor | Shim, Jae-Phil | - |
dc.contributor.nonIdAuthor | Kim, Chang Zoo | - |
dc.contributor.nonIdAuthor | Kim, Hyung-Jun | - |
dc.contributor.nonIdAuthor | Song, Jin Dong | - |
dc.contributor.nonIdAuthor | Choi, Won Jun | - |
dc.contributor.nonIdAuthor | Choi, Sung-Jin | - |
dc.contributor.nonIdAuthor | Kim, Dae Hwan | - |
dc.contributor.nonIdAuthor | Kim, Dong Myong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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