DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Shim, Jae-Phil | ko |
dc.contributor.author | Geum, Dae-Myeong | ko |
dc.contributor.author | Kim, Jaewon | ko |
dc.contributor.author | Kim, Chang Zoo | ko |
dc.contributor.author | Kim, Han-Sung | ko |
dc.contributor.author | Song, Jin Dong | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Kim, Dae Hwan | ko |
dc.contributor.author | Choi, Won Jun | ko |
dc.contributor.author | Kim, Hyung-Jun | ko |
dc.contributor.author | Kim, Dong Myong | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.date.accessioned | 2019-02-20T04:57:32Z | - |
dc.date.available | 2019-02-20T04:57:32Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250250 | - |
dc.description.abstract | In this paper, we fabricated In0.53Ga0.47As-on insulator (OI) MOSFETs on Si substrates with different doping types to mimic ground plane doping using direct wafer bonding and epitaxial lift-off (ELO) techniques. We investigated the impact of doping types on the ground plane and the backgate biasing, which are important and preferable components in monolithic 3-D (M3D) integration, on the electrical properties of MOSFETs, such as the threshold voltage (V-T) and the effective mobility (mu(eff)). It was found that V-T and mu(eff) were significantly modulated by the back-substrate doping and the back-biasing. These observations were explained by the change of carrier distributions, which were confirmed by technology computer-aided design simulation. Furthermore, we investigated the reusability of InP donor substrates for sequential epitaxial growth after ELO process toward a cost-effective M3D integration with the In0.53Ga0.47As channel. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel | - |
dc.type | Article | - |
dc.identifier.wosid | 000430698900031 | - |
dc.identifier.scopusid | 2-s2.0-85044868508 | - |
dc.type.rims | ART | - |
dc.citation.volume | 65 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 1862 | - |
dc.citation.endingpage | 1868 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2018.2810304 | - |
dc.contributor.nonIdAuthor | Kim, Seong Kwang | - |
dc.contributor.nonIdAuthor | Shim, Jae-Phil | - |
dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
dc.contributor.nonIdAuthor | Kim, Jaewon | - |
dc.contributor.nonIdAuthor | Kim, Chang Zoo | - |
dc.contributor.nonIdAuthor | Kim, Han-Sung | - |
dc.contributor.nonIdAuthor | Song, Jin Dong | - |
dc.contributor.nonIdAuthor | Choi, Sung-Jin | - |
dc.contributor.nonIdAuthor | Kim, Dae Hwan | - |
dc.contributor.nonIdAuthor | Choi, Won Jun | - |
dc.contributor.nonIdAuthor | Kim, Hyung-Jun | - |
dc.contributor.nonIdAuthor | Kim, Dong Myong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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