Characteristics of hetero-structured thermoelectric devices with a-Si/Mg2Si-stacked thin film layers
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Ji Hwa | ko |
| dc.contributor.author | Ha, Jae Kwon | ko |
| dc.contributor.author | Piyapatarakul, Tipat | ko |
| dc.contributor.author | Yoon, Chongsei | ko |
| dc.contributor.author | Jeon, Buil | ko |
| dc.contributor.author | Giwan Yoon | ko |
| dc.date.accessioned | 2018-12-20T08:04:52Z | - |
| dc.date.available | 2018-12-20T08:04:52Z | - |
| dc.date.created | 2018-10-30 | - |
| dc.date.created | 2018-10-30 | - |
| dc.date.created | 2018-10-30 | - |
| dc.date.issued | 2018-11 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.54, no.24, pp.1399 - 1401 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/248745 | - |
| dc.description.abstract | New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg2Si hetero-structure layers were found to be much superior to those of the a-Si layer. | - |
| dc.language | English | - |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | Characteristics of hetero-structured thermoelectric devices with a-Si/Mg2Si-stacked thin film layers | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000451758700021 | - |
| dc.identifier.scopusid | 2-s2.0-85057817081 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 54 | - |
| dc.citation.issue | 24 | - |
| dc.citation.beginningpage | 1399 | - |
| dc.citation.endingpage | 1401 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.identifier.doi | 10.1049/el.2018.6352 | - |
| dc.contributor.localauthor | Giwan Yoon | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
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