A Very Low Operation Current InGaAsp/inp Total Internal Reflection Optical Switch Using p/n/p/n Current Blocking Layers
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Oh, Kwang-Ryong | - |
| dc.contributor.author | Park, Ki-sung | - |
| dc.contributor.author | oh, Dae kon | - |
| dc.contributor.author | kim, Hong man | - |
| dc.contributor.author | Park, Hyung Moo | - |
| dc.contributor.author | Lee, Kwyro | - |
| dc.date.accessioned | 2011-08-11T06:39:35Z | - |
| dc.date.available | 2011-08-11T06:39:35Z | - |
| dc.date.issued | 1994 | - |
| dc.identifier.citation | IEEE Photonics Technology Letters, Vol.6, No.1 | en |
| dc.identifier.uri | http://hdl.handle.net/10203/24866 | - |
| dc.description.abstract | A very low operation current (20 mA) has been achieved for the first time with an InGaAsP/InP total-internal-reflection optical switch. The optical switch is fabricated on an n+-InP substrate using p/n/p/n current blocking layers. This switch has a large effective contact area and is a self-aligned structure. This is a promising result for making optical integrated circuits. | en |
| dc.description.sponsorship | The authors wish to thank our collegues in Compound Semiconductors Lab.,J.D.Park, C.Y.Park, J.B.Yoo, K.H.Park, S.G.Kang, J.K.Lee, D.H.Jang, J.S.Kim and H.R.Choo for their encouragement and helpful assistance. | en |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | en |
| dc.title | A Very Low Operation Current InGaAsp/inp Total Internal Reflection Optical Switch Using p/n/p/n Current Blocking Layers | en |
| dc.type | Article | en |
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