The Dependence of I-V Characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers on the transverse uniaxial stress

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dc.contributor.authorLu, S. S.-
dc.contributor.authorLee, Kwyro-
dc.contributor.authorNathan, M. I.-
dc.contributor.authorHeiblum, M.-
dc.contributor.authorWright, S. L.-
dc.date.accessioned2011-08-01-
dc.date.available2011-08-01-
dc.date.created2012-02-06-
dc.date.issued1989-
dc.identifier.citation16th Int. Symposium on GaAs and Related Compounds, v.106, no., pp.795 - 799-
dc.identifier.urihttp://hdl.handle.net/10203/24736-
dc.languageENG-
dc.language.isoen_USen
dc.titleThe Dependence of I-V Characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers on the transverse uniaxial stress-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.volume106-
dc.citation.beginningpage795-
dc.citation.endingpage799-
dc.citation.publicationname16th Int. Symposium on GaAs and Related Compounds-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorLu, S. S.-
dc.contributor.nonIdAuthorNathan, M. I.-
dc.contributor.nonIdAuthorHeiblum, M.-
dc.contributor.nonIdAuthorWright, S. L.-

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