The Dependence of I-V Characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers on the transverse uniaxial stress
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lu, S. S. | - |
| dc.contributor.author | Lee, Kwyro | - |
| dc.contributor.author | Nathan, M. I. | - |
| dc.contributor.author | Heiblum, M. | - |
| dc.contributor.author | Wright, S. L. | - |
| dc.date.accessioned | 2011-08-01 | - |
| dc.date.available | 2011-08-01 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989 | - |
| dc.identifier.citation | 16th Int. Symposium on GaAs and Related Compounds, v.106, no., pp.795 - 799 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/24736 | - |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.title | The Dependence of I-V Characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers on the transverse uniaxial stress | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.volume | 106 | - |
| dc.citation.beginningpage | 795 | - |
| dc.citation.endingpage | 799 | - |
| dc.citation.publicationname | 16th Int. Symposium on GaAs and Related Compounds | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | Lu, S. S. | - |
| dc.contributor.nonIdAuthor | Nathan, M. I. | - |
| dc.contributor.nonIdAuthor | Heiblum, M. | - |
| dc.contributor.nonIdAuthor | Wright, S. L. | - |
- Appears in Collection
- EE-Conference Papers(학술회의논문)
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