First-principles based simulations of nanoscale field effect transistors having hundreds of thousands atoms
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신민철 | ko |
| dc.date.accessioned | 2018-12-20T02:03:25Z | - |
| dc.date.available | 2018-12-20T02:03:25Z | - |
| dc.date.created | 2018-11-29 | - |
| dc.date.issued | 2018-10-04 | - |
| dc.identifier.citation | 2018 한국슈퍼컴퓨팅 컨피런스 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/247336 | - |
| dc.language | English | - |
| dc.publisher | 한국과학기술정보연구원 | - |
| dc.title | First-principles based simulations of nanoscale field effect transistors having hundreds of thousands atoms | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2018 한국슈퍼컴퓨팅 컨피런스 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 더케이호텔 서울 | - |
| dc.contributor.localauthor | 신민철 | - |
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