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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

Clustering effect and residual stress in InxGa1-xAs/GaAs strained layer grown by metal-organic chemical-vapor deposition

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dc.contributor.authorHwang, Insunko
dc.contributor.authorLee, Chulko
dc.contributor.authorKim, Jae Eunko
dc.contributor.authorPark, Hae Yongko
dc.contributor.authorSuh, E.-K.ko
dc.contributor.authorLim, K. Y.ko
dc.contributor.authorLee, H. J.ko
dc.date.accessioned2011-07-26T02:26:38Z-
dc.date.available2011-07-26T02:26:38Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-03-
dc.identifier.citationPHYSICAL REVIEW B, v.51, no.12, pp.7894 - 7897-
dc.identifier.issn0163-1829-
dc.identifier.urihttp://hdl.handle.net/10203/24703-
dc.description.sponsorshipThis work is supported in part by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center at Jeonbuk National University.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAmer Physical Soc-
dc.subjectHETEROEPITAXIAL GAAS-
dc.subjectPHOTOREFLECTANCE-
dc.subjectSI-
dc.titleClustering effect and residual stress in InxGa1-xAs/GaAs strained layer grown by metal-organic chemical-vapor deposition-
dc.typeArticle-
dc.identifier.wosidA1995QQ59800061-
dc.identifier.scopusid2-s2.0-0040151209-
dc.type.rimsART-
dc.citation.volume51-
dc.citation.issue12-
dc.citation.beginningpage7894-
dc.citation.endingpage7897-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Jae Eun-
dc.contributor.localauthorPark, Hae Yong-
dc.contributor.nonIdAuthorHwang, Insun-
dc.contributor.nonIdAuthorLee, Chul-
dc.contributor.nonIdAuthorSuh, E.-K.-
dc.contributor.nonIdAuthorLim, K. Y.-
dc.contributor.nonIdAuthorLee, H. J.-
dc.type.journalArticleNote-
dc.subject.keywordPlusHETEROEPITAXIAL GAAS-
dc.subject.keywordPlusPHOTOREFLECTANCE-
dc.subject.keywordPlusSI-
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