DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Kim, Weon-Guk | ko |
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Jin, Ik Kyeong | ko |
dc.contributor.author | Kim, Da-Jin | ko |
dc.contributor.author | Im, Hwon | ko |
dc.contributor.author | Tcho, Il-Woong | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2018-11-12T04:18:45Z | - |
dc.date.available | 2018-11-12T04:18:45Z | - |
dc.date.created | 2018-10-22 | - |
dc.date.created | 2018-10-22 | - |
dc.date.created | 2018-10-22 | - |
dc.date.created | 2018-10-22 | - |
dc.date.issued | 2018-10 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.8 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/246320 | - |
dc.description.abstract | Microwave-induced thermal curing is demonstrated to improve the reliability and to prolong the lifetime of chips containing nanoscale electron devices. A film containing graphite powder with high microwave absorbing efficiency was fabricated at low cost. The film is flexible, bendable, foldable, and attachable to a chip. A commercial off-the-shelf chip and a representative 3-dimensional (3D) metaloxide-semiconductor field-effect transistor (MOSFET), known as FinFET, were utilized to verify the curing behaviors of the microwave-induced heat treatment. The heat effectively cured not only total ionizing dose (TID) damage from the external environment, but also internal electrical stress such as hot-carrier injection (HCI), which are representative sources of damages in MOSFET insulators. Then, the characteristics of the pre- and post-curing electron devices are investigated using electrical measurements and numerical simulations. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | On-Chip Curing by Microwave for Long Term Usage of Electronic Devices in Harsh Environments | - |
dc.type | Article | - |
dc.identifier.wosid | 000446577500030 | - |
dc.identifier.scopusid | 2-s2.0-85054582041 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/s41598-018-33309-x | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.contributor.nonIdAuthor | Jin, Ik Kyeong | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | MOS OXIDES | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | RADIATION | - |
dc.subject.keywordPlus | POWDER | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | MOS OXIDES | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | RADIATION | - |
dc.subject.keywordPlus | POWDER | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.