Complementary logic operation based on electric-field controlled spin-orbit torques

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dc.contributor.authorBaek, Seung-heon Chrisko
dc.contributor.authorPark, Kyung-Woongko
dc.contributor.authorKil, Deok-Sinko
dc.contributor.authorJang, Yunhoko
dc.contributor.authorPark, Jongsunko
dc.contributor.authorLee, Kyung-Jinko
dc.contributor.authorPark, Byong-Gukko
dc.date.accessioned2018-10-19T00:32:24Z-
dc.date.available2018-10-19T00:32:24Z-
dc.date.created2018-09-27-
dc.date.created2018-09-27-
dc.date.created2018-09-27-
dc.date.created2018-09-27-
dc.date.created2018-09-27-
dc.date.created2018-09-27-
dc.date.issued2018-07-
dc.identifier.citationNATURE ELECTRONICS, v.1, no.7, pp.398 - 403-
dc.identifier.issn2520-1131-
dc.identifier.urihttp://hdl.handle.net/10203/245931-
dc.description.abstractSpintronic devices offer low power consumption, built-in memory, high scalability and reconfigurability, and could therefore provide an alternative to traditional semiconductor-based electronic devices. However, for spintronic devices to be useful in computing, complementary logic operation using spintronic logic gates is likely to be required. Here we report a complementary spin logic device using electric-field controlled spin-orbit torque switching in a heavy metal/ferromagnet/oxide structure. We show that the critical current for spin-orbit-torque-induced switching of perpendicular magnetization can be efficiently modulated by an electric field via the voltage-controlled magnetic anisotropy effect. Moreover, the polarity of the voltage-controlled magnetic anisotropy can be tuned through modification of the oxidation state at the ferromagnet/oxide interface. This allows us to create both n-type and p-type spin logic devices and demonstrate complementary logic operation.-
dc.languageEnglish-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleComplementary logic operation based on electric-field controlled spin-orbit torques-
dc.typeArticle-
dc.identifier.wosid000444078800011-
dc.identifier.scopusid2-s2.0-85056057269-
dc.type.rimsART-
dc.citation.volume1-
dc.citation.issue7-
dc.citation.beginningpage398-
dc.citation.endingpage403-
dc.citation.publicationnameNATURE ELECTRONICS-
dc.identifier.doi10.1038/s41928-018-0099-8-
dc.contributor.localauthorLee, Kyung-Jin-
dc.contributor.localauthorPark, Byong-Guk-
dc.contributor.nonIdAuthorKil, Deok-Sin-
dc.contributor.nonIdAuthorJang, Yunho-
dc.contributor.nonIdAuthorPark, Jongsun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusEFFECT TRANSISTOR-
dc.subject.keywordPlusATOMIC LAYERS-
dc.subject.keywordPlusMAGNETIZATION-
dc.subject.keywordPlusSPINTRONICS-
dc.subject.keywordPlusMAGNETISM-
dc.subject.keywordPlusPRECESSION-
dc.subject.keywordPlusANISOTROPY-
dc.subject.keywordPlusDEVICES-
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