DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Bongho | ko |
dc.contributor.author | Kim, Taegyun | ko |
dc.contributor.author | Lee, Sojeong | ko |
dc.contributor.author | Lee, Won-Yong | ko |
dc.contributor.author | Kang, Hongki | ko |
dc.contributor.author | Cho, Chan Seob | ko |
dc.contributor.author | Jang, Jaewon | ko |
dc.date.accessioned | 2018-08-21T04:40:18Z | - |
dc.date.available | 2018-08-21T04:40:18Z | - |
dc.date.created | 2018-08-20 | - |
dc.date.created | 2018-08-20 | - |
dc.date.issued | 2018-08 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.39, no.8, pp.1179 - 1182 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/245188 | - |
dc.description.abstract | Sol-gel processed ultrathin nanostructured SnO2 thin-film transistors were successfully fabricated on a SiO2 /Si substrate without using a self-aligned monolayer or high-k insulator, which may be unsuitable techniques for the commercial fabrication of complementary metal-oxide-semiconductors. The highest extracted field mobilitywas approximately 100cm(2)/V.s. In addition, by controlling the SnO2 film thickness, we successfully increased the on/off current ratio to similar to 107. The electrical performance of the proposed transistors is sufficient for high-resolution liquid crystal or organic light-emitting diode displays, which require a high field-effect mobility (>10 cm(2)/V.s) and high on/off current ratio (>106). Ultrathin SnO2 is also a promising rare-metal-free starting matrix for ternary and quaternary alloys, showing promising electric properties. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | LAYER | - |
dc.title | High Performance Ultrathin SnO2 Thin-Film Transistors by Sol-Gel Method | - |
dc.type | Article | - |
dc.identifier.wosid | 000440006100016 | - |
dc.identifier.scopusid | 2-s2.0-85049102128 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1179 | - |
dc.citation.endingpage | 1182 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2018.2849689 | - |
dc.contributor.localauthor | Kang, Hongki | - |
dc.contributor.nonIdAuthor | Jang, Bongho | - |
dc.contributor.nonIdAuthor | Kim, Taegyun | - |
dc.contributor.nonIdAuthor | Lee, Sojeong | - |
dc.contributor.nonIdAuthor | Lee, Won-Yong | - |
dc.contributor.nonIdAuthor | Cho, Chan Seob | - |
dc.contributor.nonIdAuthor | Jang, Jaewon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Sol-gel | - |
dc.subject.keywordAuthor | SnO2 | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | quantum confinement | - |
dc.subject.keywordPlus | LAYER | - |
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