DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, Youngjun | ko |
dc.contributor.author | Hong, Woonggi | ko |
dc.contributor.author | Yang, SangYoon | ko |
dc.contributor.author | Kang, Taegyu | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2018-08-20T07:55:23Z | - |
dc.date.available | 2018-08-20T07:55:23Z | - |
dc.date.created | 2018-06-11 | - |
dc.date.created | 2018-06-11 | - |
dc.date.created | 2018-06-11 | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | SOCIETY FOR INFORMATION DISPLAY, v.49, no.1, pp.797 - 799 | - |
dc.identifier.issn | 2168-0159 | - |
dc.identifier.uri | http://hdl.handle.net/10203/244911 | - |
dc.description.abstract | We demonstrated Molybdenum disulfide (MoS2) based thin‐film transistors on polyimide substrate for flexible OLED display. And we fabricated practical MoS2 OLED driving circuit using large area MoS2 thin film grown by chemical vapor deposition (CVD) method. Our device showed high‐performance for display driving circuit over 10 μA driving current, on‐off ratio of 109. And the 2T OLED driving operation test was also conducted. In this work, we will show results suitable for practical flexible OLED display. | - |
dc.language | English | - |
dc.publisher | JOHN WILEY & SONS | - |
dc.title | High‐Performance MoS2 Thin‐Film Transistors for Flexible OLED display | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 49 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 797 | - |
dc.citation.endingpage | 799 | - |
dc.citation.publicationname | SOCIETY FOR INFORMATION DISPLAY | - |
dc.identifier.doi | 10.1002/sdtp.12323 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Woo, Youngjun | - |
dc.contributor.nonIdAuthor | Kang, Taegyu | - |
dc.description.isOpenAccess | N | - |
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