Physical understanding of Low Field Mobility in Silicon Invension Layer and its Implications for Deep Submicron MOSFET Design
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Kwyro | ko |
| dc.date.accessioned | 2011-07-06T03:17:40Z | - |
| dc.date.available | 2011-07-06T03:17:40Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993-01 | - |
| dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.26, pp.S82 - S84 | - |
| dc.identifier.issn | 3744-4884 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/24459 | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | 한국물리학회 | - |
| dc.title | Physical understanding of Low Field Mobility in Silicon Invension Layer and its Implications for Deep Submicron MOSFET Design | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 26 | - |
| dc.citation.beginningpage | S82 | - |
| dc.citation.endingpage | S84 | - |
| dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
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