Performance Degradation of Flexible Si Nanomembrane Transistors with Al2O3 and SiO2 Dielectrics under Mechanical Stress

Abstract

Flexible Si nanomembrane transistors with Al2O3 and SiO2 gate dielectrics were fabricated, and their mechanical stability was compared under various bending conditions. Both the Al2O3 and SiO2 gate dielectric devices exhibited good charge transport properties, which was associated with the advantage of having a fully depleted mode in the MOSFET operation. The results of the comparison showed that the Al2O3 gate dielectric device degraded to a greater extent than the SiO2 gate dielectric device under the same bending condition. The greater degradation in the Al2O3 gate dielectric device was attributed to the higher Young's modulus of the Al2O3, which put more strain on the Al2O3 under the same bending condition.