Photoreflectance study of etching and annealing effect on AlGaAs/GaAs heterostructure
We investigated the PR spectra of as-grown, annealed and etched modulation-doped AlGaAs/GaAs heterostructure samples. As annealing time increases, the built-in electric fields are strengthened as a result of the diffusion of Si-Si pairs. As the etching time increases the broad signal near GaAs band-gap energy and the single peak shape (SPS) signal near AlGaAs band-gap energy change to the step-like signal and the double peak shape (DPS) signal, respectively. (C) 1997 Elsevier Science Ltd.
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Issue Date
- 1997-07
- Language
- English
- Article Type
- Article
- Citation
SOLID STATE COMMUNICATIONS, v.103, no.1, pp.1 - 3
- ISSN
- 0038-1098
- Appears in Collection
- PH-Journal Papers(저널논문)
- Files in This Item
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