DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Jong Heon | ko |
dc.contributor.author | Choi, Ji Hun | ko |
dc.contributor.author | Cho, Sung Haeng | ko |
dc.contributor.author | Pi, Jae-Eun | ko |
dc.contributor.author | Kim, Hee-Ok | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Park, KeeChan | ko |
dc.contributor.author | Yoo, Seunghyup | ko |
dc.date.accessioned | 2018-04-24T06:33:02Z | - |
dc.date.available | 2018-04-24T06:33:02Z | - |
dc.date.created | 2018-04-18 | - |
dc.date.created | 2018-04-18 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.39, no.4, pp.508 - 511 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/241415 | - |
dc.description.abstract | We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2 cm(2)/V.s, threshold voltage of 0.5 V, and subthreshold swing of 0.15 V/decade were obtained with a thin IZO-inserted double-layer channel TFT. The positive bias stability was improved with an IZO-inserted double-layer channel. We fabricated 13-stage ring oscillators, which exhibited an oscillating frequency of 296 kHz at V-DD = 20. These results demonstrate that the proposed double-layer channel oxide TFT can be used for demanding applications such as backplane devices for ultrahigh resolution display. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | STABILITY | - |
dc.subject | CIRCUITS | - |
dc.title | Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm(2)/ V.s for High-Speed Operation | - |
dc.type | Article | - |
dc.identifier.wosid | 000428689000012 | - |
dc.identifier.scopusid | 2-s2.0-85042139305 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 508 | - |
dc.citation.endingpage | 511 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2018.2805705 | - |
dc.contributor.localauthor | Yoo, Seunghyup | - |
dc.contributor.nonIdAuthor | Choi, Ji Hun | - |
dc.contributor.nonIdAuthor | Cho, Sung Haeng | - |
dc.contributor.nonIdAuthor | Pi, Jae-Eun | - |
dc.contributor.nonIdAuthor | Kim, Hee-Ok | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.contributor.nonIdAuthor | Park, KeeChan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | high mobility | - |
dc.subject.keywordAuthor | double layer | - |
dc.subject.keywordAuthor | back channel etch | - |
dc.subject.keywordAuthor | AlInZnSnO | - |
dc.subject.keywordAuthor | InZnO | - |
dc.subject.keywordAuthor | oxide TFT | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | CIRCUITS | - |
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