DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Joong Gun | ko |
dc.contributor.author | Pak, Kwanyong | ko |
dc.contributor.author | Kim, Choong Sun | ko |
dc.contributor.author | Bong, Jae Hoon | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2018-04-24T02:16:23Z | - |
dc.date.available | 2018-04-24T02:16:23Z | - |
dc.date.created | 2017-11-27 | - |
dc.date.created | 2017-11-27 | - |
dc.date.created | 2017-11-27 | - |
dc.date.created | 2017-11-27 | - |
dc.date.created | 2017-11-27 | - |
dc.date.created | 2017-11-27 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.citation | SMALL, v.14, no.9, pp.1703035 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | http://hdl.handle.net/10203/241104 | - |
dc.description.abstract | A high-performance top-gated graphene field-effect transistor (FET) with excellent mechanical flexibility is demonstrated by implementing a surface-energy-engineered copolymer gate dielectric via a solvent-free process called initiated chemical vapor deposition. The ultrathin, flexible copolymer dielectric is synthesized from two monomers composed of 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane and 1-vinylimidazole (VIDZ). The copolymer dielectric enables the graphene device to exhibit excellent dielectric performance and substantially enhanced mechanical flexibility. The p-doping level of the graphene can be tuned by varying the polar VIDZ fraction in the copolymer dielectric, and the Dirac voltage (V-Dirac) of the graphene FET can thus be systematically controlled. In particular, the V-Dirac approaches neutrality with higher VIDZ concentrations in the copolymer dielectric, which minimizes the carrier scattering and thereby improves the charge transport of the graphene device. As a result, the graphene FET with 20 nm thick copolymer dielectrics exhibits field-effect hole and electron mobility values of over 7200 and 3800 cm(2) V-1 s(-1), respectively, at room temperature. These electrical characteristics remain unchanged even at the 1 mm bending radius, corresponding to a tensile strain of 1.28%. The formed gate stack with the copolymer gate dielectric is further investigated for high-frequency flexible device applications. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric | - |
dc.type | Article | - |
dc.identifier.wosid | 000426524600004 | - |
dc.identifier.scopusid | 2-s2.0-85038103986 | - |
dc.type.rims | ART | - |
dc.citation.volume | 14 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1703035 | - |
dc.citation.publicationname | SMALL | - |
dc.identifier.doi | 10.1002/smll.201703035 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Dirac voltage | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition (iCVD) | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | SUSPENDED GRAPHENE | - |
dc.subject.keywordPlus | ULTRATHIN | - |
dc.subject.keywordPlus | SCATTERING | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | FILMS | - |
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