A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

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dc.contributor.authorOh, Joong Gunko
dc.contributor.authorPak, Kwanyongko
dc.contributor.authorKim, Choong Sunko
dc.contributor.authorBong, Jae Hoonko
dc.contributor.authorHwang, Wan Sikko
dc.contributor.authorIm, Sung Gapko
dc.contributor.authorCho, Byung-Jinko
dc.date.accessioned2018-04-24T02:16:23Z-
dc.date.available2018-04-24T02:16:23Z-
dc.date.created2017-11-27-
dc.date.created2017-11-27-
dc.date.created2017-11-27-
dc.date.created2017-11-27-
dc.date.created2017-11-27-
dc.date.created2017-11-27-
dc.date.issued2018-03-
dc.identifier.citationSMALL, v.14, no.9, pp.1703035-
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10203/241104-
dc.description.abstractA high-performance top-gated graphene field-effect transistor (FET) with excellent mechanical flexibility is demonstrated by implementing a surface-energy-engineered copolymer gate dielectric via a solvent-free process called initiated chemical vapor deposition. The ultrathin, flexible copolymer dielectric is synthesized from two monomers composed of 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane and 1-vinylimidazole (VIDZ). The copolymer dielectric enables the graphene device to exhibit excellent dielectric performance and substantially enhanced mechanical flexibility. The p-doping level of the graphene can be tuned by varying the polar VIDZ fraction in the copolymer dielectric, and the Dirac voltage (V-Dirac) of the graphene FET can thus be systematically controlled. In particular, the V-Dirac approaches neutrality with higher VIDZ concentrations in the copolymer dielectric, which minimizes the carrier scattering and thereby improves the charge transport of the graphene device. As a result, the graphene FET with 20 nm thick copolymer dielectrics exhibits field-effect hole and electron mobility values of over 7200 and 3800 cm(2) V-1 s(-1), respectively, at room temperature. These electrical characteristics remain unchanged even at the 1 mm bending radius, corresponding to a tensile strain of 1.28%. The formed gate stack with the copolymer gate dielectric is further investigated for high-frequency flexible device applications.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleA High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric-
dc.typeArticle-
dc.identifier.wosid000426524600004-
dc.identifier.scopusid2-s2.0-85038103986-
dc.type.rimsART-
dc.citation.volume14-
dc.citation.issue9-
dc.citation.beginningpage1703035-
dc.citation.publicationnameSMALL-
dc.identifier.doi10.1002/smll.201703035-
dc.contributor.localauthorIm, Sung Gap-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.nonIdAuthorHwang, Wan Sik-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorDirac voltage-
dc.subject.keywordAuthorfield effect transistor-
dc.subject.keywordAuthorflexible electronics-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorinitiated chemical vapor deposition (iCVD)-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusSUSPENDED GRAPHENE-
dc.subject.keywordPlusULTRATHIN-
dc.subject.keywordPlusSCATTERING-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusFILMS-
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