DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Sanghun | ko |
dc.contributor.author | Park, Sungho | ko |
dc.date.accessioned | 2018-03-21T02:57:03Z | - |
dc.date.available | 2018-03-21T02:57:03Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.12, pp.II1101 - II1105 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240845 | - |
dc.description.abstract | In this study, we fabricate a thermally stable triple-Ti1-xAlxN metal gate for potential use in p-type metal-oxide-semiconductor devices and analyze the impact of Al concentrations in an atomic-layer-deposited Ti1-xAlxN film on the effective work function and the resistivity of the Ti1-xAlxN metal gate. An increase in the Al content in the Ti1-xAlxN film causes an increase in the resistivity of the Ti1-xAlxN film metal gate while improving the thermal stability of the metal gate. By combining the positive effects in terms of the work function and the resistivity, we prepared a triple-layer Ti0.75Al0.25N/TiN/Ti0.75Al0.25N metal gate, which exhibits a work function of 5.04 eV and resistivity of 686 mu Omega cm after thermal annealing at 900 degrees C in N-2 for 30 s, making it suitable for use as a metal gate in pMOS field-effect transistors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3496032] All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | FILMS | - |
dc.title | Fabrication of Robust Triple-Ti1-xAlxN Metal Gate by Atomic Layer Deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000283938300077 | - |
dc.identifier.scopusid | 2-s2.0-78449305368 | - |
dc.type.rims | ART | - |
dc.citation.volume | 157 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | II1101 | - |
dc.citation.endingpage | II1105 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.3496032 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Park, Sungho | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | FILMS | - |
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