DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Seungjae | ko |
dc.contributor.author | Kong, Jaemin | ko |
dc.contributor.author | Song, Sunghoon | ko |
dc.contributor.author | Lee, Kwanghee | ko |
dc.contributor.author | Lee, Takhee | ko |
dc.contributor.author | Hwang, Hyunsang | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2018-03-21T02:56:55Z | - |
dc.date.available | 2018-03-21T02:56:55Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2010-09 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.11, pp.H1042 - H1045 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240840 | - |
dc.description.abstract | We propose a solution-processed transparent TiO(x)-based resistive switching random access memory (ReRAM) device. Electronically active TiO(x) was prepared by sol-gel spin coating of a titanium(IV) isopropoxide precursor on an indium tin oxide-coated glass. The prepared TiO(x) film is completely transparent in the visible range and has an amorphous structure. The fabricated TiO(x)-based ReRAM device exhibits distinct resistive switching under consecutive dc voltage sweeps of +/- 2 V. The device also exhibits good memory performance, including fast switching speed with a pulse width of 1 mu s, stable pulse endurance over 1000 cycles, and excellent retention characteristics at up to 125 degrees C. In addition, based on the log I - log V plot and X-ray photoelectron spectroscopy analysis, we postulate that the fabricated device is operated by the reversible formation/rupture of the conducting filament in the oxygen-deficient TiO(x) layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489370] All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | TITANIUM-OXIDE | - |
dc.subject | THIN-FILM | - |
dc.subject | DEVICES | - |
dc.title | Resistive Switching Characteristics of Solution-Processed Transparent TiO(x) for Nonvolatile Memory Application | - |
dc.type | Article | - |
dc.identifier.wosid | 000283857900090 | - |
dc.identifier.scopusid | 2-s2.0-77957704263 | - |
dc.type.rims | ART | - |
dc.citation.volume | 157 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | H1042 | - |
dc.citation.endingpage | H1045 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.3489370 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Jung, Seungjae | - |
dc.contributor.nonIdAuthor | Kong, Jaemin | - |
dc.contributor.nonIdAuthor | Song, Sunghoon | - |
dc.contributor.nonIdAuthor | Lee, Kwanghee | - |
dc.contributor.nonIdAuthor | Lee, Takhee | - |
dc.contributor.nonIdAuthor | Hwang, Hyunsang | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TITANIUM-OXIDE | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | DEVICES | - |
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