Highly Transparent and Conductive Al-Doped ZnO/Ag/Al-Doped ZnO Multilayer Source/Drain Electrodes for Transparent Oxide Thin Film Transistors

Abstract

The amorphous IGZO (a-IGZO) transparent TFT with optimized AZO/Ag/AZO S/D electrodes exhibited high transparency (79.17%) in the 380-600 nm wavelength region despite the use of a metallic Ag layer due to effective antireflection. In addition, the TTFT with AZO/Ag/AZO S/D electrodes showed higher field effect mobility (mu(FE): 12.17 cm(2)/V-s) and on to off current ratio (I(on/off): 9.37 x 10(8)) than the TTFT with single AZO S/D electrodes due to a reduction in resistivity caused by insertion of the metallic Ag layer. Comparable TTFT performance of the a-IGZO based TTFT to Ti S/D electrodes indicates that the AZO/Ag/AZO multilayer electrode is a promising transparent S/D scheme for high performance TTFTs. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3533436] All rights reserved.