DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Eunah | ko |
dc.contributor.author | Lee, Hyunjae | ko |
dc.contributor.author | Goh, Youngin | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.contributor.author | Shin, Changhwan | ko |
dc.date.accessioned | 2018-03-21T02:52:36Z | - |
dc.date.available | 2018-03-21T02:52:36Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2017-09 | - |
dc.identifier.citation | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.5, no.5, pp.306 - 309 | - |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240744 | - |
dc.description.abstract | The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the gate stack. However, in order to utilize the ferroelectric capacitor (as a breakthrough technique to overcome the Boltzmann limit of the device using thermionic emission process), the thickness of the ferroelectric layer should be scaled down to sub-10-nm for ease of integration with conventional CMOS logic devices. In this paper, we demonstrate an NC fin-shaped field-effect transistor (FinFET) with a 6-nm-thick HfZrO ferroelectric capacitor. The performance parameters of NC FinFET such as on-/off-state currents and subthreshold slope are compared with those of the conventional FinFET. Furthermore, a repetitive and reliable steep switching feature of the NC FinFET at various drain voltages is demonstrated. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | VOLTAGE AMPLIFICATION | - |
dc.subject | DEVICES | - |
dc.title | Sub-60-mV / decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor | - |
dc.type | Article | - |
dc.identifier.wosid | 000408381300003 | - |
dc.identifier.scopusid | 2-s2.0-85029008133 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 306 | - |
dc.citation.endingpage | 309 | - |
dc.citation.publicationname | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.identifier.doi | 10.1109/JEDS.2017.2731401 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Ko, Eunah | - |
dc.contributor.nonIdAuthor | Lee, Hyunjae | - |
dc.contributor.nonIdAuthor | Goh, Youngin | - |
dc.contributor.nonIdAuthor | Shin, Changhwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Negative capacitance | - |
dc.subject.keywordAuthor | steep switching devices | - |
dc.subject.keywordAuthor | Hafnium-based ferroelectric material | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordPlus | VOLTAGE AMPLIFICATION | - |
dc.subject.keywordPlus | DEVICES | - |
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