DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Byeong Woon | ko |
dc.contributor.author | Yeom, Hye-In | ko |
dc.contributor.author | Kim, Daewon | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Lee, Dongil | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2018-03-21T02:50:24Z | - |
dc.date.available | 2018-03-21T02:50:24Z | - |
dc.date.created | 2017-12-27 | - |
dc.date.created | 2017-12-27 | - |
dc.date.created | 2017-12-27 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.141, pp.65 - 68 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240711 | - |
dc.description.abstract | Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 mu S/mu m, that of the DG GFET was 25.7 mu S/mu m, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Enhanced transconductance in a double-gate graphene field-effect transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000425491200010 | - |
dc.identifier.scopusid | 2-s2.0-85038861053 | - |
dc.type.rims | ART | - |
dc.citation.volume | 141 | - |
dc.citation.beginningpage | 65 | - |
dc.citation.endingpage | 68 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.sse.2017.12.008 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Daewon | - |
dc.contributor.nonIdAuthor | Lee, Dongil | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Double-gate | - |
dc.subject.keywordAuthor | Field-effect transistor | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Transconductance | - |
dc.subject.keywordPlus | MOBILITY | - |
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