Analysis of Interface Trap States Generated by the Self-Heating Effect in Highly Flexible Single-Crystalline Si Nanomembrane Transistors

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dc.contributor.authorBong, Jae Hoonko
dc.contributor.authorKIM, SEUNGYOONko
dc.contributor.authorJeong, Chan Baeko
dc.contributor.authorChang, Ki Sooko
dc.contributor.authorHwang, Wan Sikko
dc.contributor.authorCho, Byung-Jinko
dc.date.accessioned2018-03-21T01:56:05Z-
dc.date.available2018-03-21T01:56:05Z-
dc.date.created2018-02-27-
dc.date.created2018-02-27-
dc.date.issued2017-12-06-
dc.identifier.citation48th IEEE Semiconductor Interface Specialists Conference-
dc.identifier.urihttp://hdl.handle.net/10203/240432-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleAnalysis of Interface Trap States Generated by the Self-Heating Effect in Highly Flexible Single-Crystalline Si Nanomembrane Transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname48th IEEE Semiconductor Interface Specialists Conference-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationCatamaran Resort Hotel, San Diego-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.nonIdAuthorJeong, Chan Bae-
dc.contributor.nonIdAuthorChang, Ki Soo-
dc.contributor.nonIdAuthorHwang, Wan Sik-
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EE-Conference Papers(학술회의논문)
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