CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Kwyro | ko |
| dc.contributor.author | SHUR, MS | ko |
| dc.contributor.author | DRUMMOND, TJ | ko |
| dc.contributor.author | MORKOC, H | ko |
| dc.date.accessioned | 2011-06-02T06:42:19Z | - |
| dc.date.available | 2011-06-02T06:42:19Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1983 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.30, no.3, pp.207 - 212 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/24002 | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1983QP14900004 | - |
| dc.identifier.scopusid | 2-s2.0-0020717268 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 30 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 207 | - |
| dc.citation.endingpage | 212 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | SHUR, MS | - |
| dc.contributor.nonIdAuthor | DRUMMOND, TJ | - |
| dc.contributor.nonIdAuthor | MORKOC, H | - |
| dc.type.journalArticle | Article | - |
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