A Study of Hot-Carrier Injection Influenced by Doping Concentration in a Junctionless-mode Gate-All-Around Field Effect Transistor with 5-story Vertically Integrated Nanowires

Abstract

The reliability characteristics related to hot-carrier injection (HCI) in a junctionless mode field effect transistor (JM-FET), are investigated for different channel doping concentrations. The JM-FET is comprised of 5-story vertically integrated nanowires with a gate-all-around (GAA) structure. In the JM-FET, it is found that the degradation of the on-state current by HCI is reduced in the device with higher channel doping concentration. This is due to reduced contact resistance and series resistance, although the punchthrough breakdown voltage is decreased. This study can contribute to optimizing the doping concentration of the source, drain and channel of JM-FETs with a 5-story vertically integrated structure, providing advantages for process integration and reliability.