DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chalapathy, RBV | ko |
dc.date.accessioned | 2018-02-21T05:11:33Z | - |
dc.date.available | 2018-02-21T05:11:33Z | - |
dc.date.created | 2018-01-15 | - |
dc.date.created | 2018-01-15 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | Current Photovolotaic Research, v.3, no.1, pp.27 - 31 | - |
dc.identifier.issn | 2288-3274 | - |
dc.identifier.uri | http://hdl.handle.net/10203/239971 | - |
dc.description.abstract | It is known that sulfide at the Cu(In,Ga)Se2 (CIGSe2) surface plays a positive role in CIGSe2 solar cells. We investigated the substitution of S with Se on the CIGSe2 surface in S atmosphere. We observed that the sulfur content in the CIGSe2 films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the CIGSe2 films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the CIGSe2 surface is detrimental role, it is necessary to reduce the S annealing temperature as low as 200°C. The cell performance was improved at 200°C sulfurization. | - |
dc.language | Korean | - |
dc.publisher | Korea Photovoltaic Society | - |
dc.title | Sulfurization 온도와 Cu/(In+Ga) 비가 Cu(In,Ga)Se2 박막 내 S 함량에 미치는 영향 | - |
dc.title.alternative | Effects of sulfurization temperature and Cu/(In+Ga) ratio on Sulfur content in Cu(In,Ga)Se2 thin films | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 3 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 27 | - |
dc.citation.endingpage | 31 | - |
dc.citation.publicationname | Current Photovolotaic Research | - |
dc.contributor.nonIdAuthor | Chalapathy, RBV | - |
dc.description.isOpenAccess | N | - |
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