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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Mechanism study of reversible resistivity change in oxide thin film

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dc.contributor.authorHong, S.ko
dc.contributor.authorChang, S. H.ko
dc.contributor.authorPhatak, C.ko
dc.contributor.authorMagyari-Kope, B.ko
dc.contributor.authorNishi, Y.ko
dc.contributor.authorChattopadhyay, S.ko
dc.contributor.authorKim, J. H.ko
dc.date.accessioned2018-01-30T02:30:07Z-
dc.date.available2018-01-30T02:30:07Z-
dc.date.created2017-12-29-
dc.date.created2017-12-29-
dc.date.issued2015-10-
dc.identifier.citationSymposium on Nonvolatile Memories 4 - 228th ECS Meeting, pp.51 - 55-
dc.identifier.urihttp://hdl.handle.net/10203/238110-
dc.description.abstractHere we present our findings related to the mechanism of reversible resistivity in Pt/TiO-
dc.languageEnglish-
dc.publisherElectrochemical Society Inc.-
dc.titleMechanism study of reversible resistivity change in oxide thin film-
dc.typeConference-
dc.identifier.scopusid2-s2.0-84945900512-
dc.type.rimsCONF-
dc.citation.beginningpage51-
dc.citation.endingpage55-
dc.citation.publicationnameSymposium on Nonvolatile Memories 4 - 228th ECS Meeting-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationPhoenix, Arizona-
dc.identifier.doi10.1149/06903.0051ecst-
dc.contributor.localauthorHong, S.-
dc.contributor.nonIdAuthorChang, S. H.-
dc.contributor.nonIdAuthorPhatak, C.-
dc.contributor.nonIdAuthorMagyari-Kope, B.-
dc.contributor.nonIdAuthorNishi, Y.-
dc.contributor.nonIdAuthorChattopadhyay, S.-
dc.contributor.nonIdAuthorKim, J. H.-
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MS-Conference Papers(학술회의논문)
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