Thick Metal CMOS Technology on High Resistivity Substrate for Monolithic 900 MHz and 1.9 GHz CMOS LNAs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, C.S. | - |
| dc.contributor.author | Park, M. | - |
| dc.contributor.author | Kim, C.h | - |
| dc.contributor.author | Yu, H.K | - |
| dc.contributor.author | Lee, Kwyro | - |
| dc.contributor.author | Kim, D.Y | - |
| dc.contributor.author | Cho, H. | - |
| dc.date.accessioned | 2011-05-13T01:28:24Z | - |
| dc.date.available | 2011-05-13T01:28:24Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1999 | - |
| dc.identifier.citation | IEEE MTT-S International Microwave Symposium Digest, v., no., pp.573 - 576 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/23619 | - |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | Thick Metal CMOS Technology on High Resistivity Substrate for Monolithic 900 MHz and 1.9 GHz CMOS LNAs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 573 | - |
| dc.citation.endingpage | 576 | - |
| dc.citation.publicationname | IEEE MTT-S International Microwave Symposium Digest | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | Kim, C.S. | - |
| dc.contributor.nonIdAuthor | Park, M. | - |
| dc.contributor.nonIdAuthor | Kim, C.h | - |
| dc.contributor.nonIdAuthor | Yu, H.K | - |
| dc.contributor.nonIdAuthor | Kim, D.Y | - |
| dc.contributor.nonIdAuthor | Cho, H. | - |
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