Browse "RIMS Collection" by Subject TISI2
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| A 42-GHz (f(max)) SiGe-base HBT using reduced pressure CVD Cho, DH; Ryum, BR; Han, TH; Lee, SM; Shin, Sung-Chul; Lee, C, SOLID-STATE ELECTRONICS, v.42, no.9, pp.1641 - 1649, 1998-09 |
| EFFECT OF THE SILICIDATION REACTION CONDITION ON THE GATE OXIDE INTEGRITY IN TI-POLYCIDE GATE LEE, NI; KIM, YW; AHN, ST, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.672 - 677, 1994-01 |
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