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Effects of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown by Using Electron Cyclotron Resonance N2O-Plasma N-I Lee; J-W Lee; S-H Hur; H-S Kim; C-H Han, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.3B, pp.1125 - 1128, 1998-01 |
EFFECTS OF PHOSPHORUS DOPING LEVEL AND THE ANNEALING TREATMENT ON THE OXIDATION-KINETICS OF TUNGSTEN SILICIDE LEE, CM; HAN, SB; Lim, Ho Bin; LEE, JG, JOURNAL OF APPLIED PHYSICS, v.70, no.3, pp.1742 - 1749, 1991-08 |
Oxidation of Silicon Using Electron Cyclotron Resonance Nitrous Oxide Plasma and Its Application to Polycrystalline Silicon Thin Film Transistors jin-woo lee; nae-in lee; sung-hoi hur; chul-hi han, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.144, no.9, pp.3283 - 3287, 1997-09 |
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