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A NOVEL LOCAL OXIDATION OF SILICON (LOCOS)-TYPE ISOLATION TECHNOLOGY FREE OF THE FIELD OXIDE THINNING EFFECT PARK, TS; AHN, SJ; AHN, ST, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.435 - 439, 1994-01 |
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