Browse "RIMS Collection" by Author sangyeon han

Showing results 1 to 8 of 8

1
50-nm MOSFET with Electrically Induced Source/Drain Extensions

sangyeon han; sung-il chang; jongho lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.1, pp.39 - 44, 2002-01

2
50nm MOSFET with Electrically Induced Source/Drain Extensions

sangyeon han; sung-il chang; jongho lee; hyungcheol shin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.9, pp.2058 - 2064, 2001-09

3
A 25-nm MOSFET with an Electrically Induced Source/Drain

sungil chang; sangyeon han; jongho lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.902 - 906, 2000-12

4
A Nano-Structure Memory with SOI Edge Channel and a Nano Dot

geunsook park; sangyeon han; taekeun hwang; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.12B, pp.7190 - 7192, 1998-12

5
A Nano-structure Memory with SOI Edge Channel and A Nono Dot

geunsook park; sangyeon han; hyungcheol shin, 전자공학회논문지, v.35, no.12, pp.48 - 52, 1998-12

6
Characteristics of an N2O Radical Oxide Grown by using Electron Cyclotron Resonance Radical Oxidation and Its Application to 50-nm MOSFETs with Floating Polysilicon Spacers

sangyeon han; sung-il chang; hyungcheol; jongho lee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.927 - 931, 2002-12

7
Lateral Silicon Field-Emission Devices Using Electron Beam Lithography

sangyeon han; sun-a yang; taekeun hwang; jongho lee; jong duk lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v.39, no.5A, pp.2556 - 2559, 2000-05

8
Si Nano-Crystal Memory Cell with Room Temperature Single Electron Effects

ilgweon kim; sangyeon han; kwangseok han; jongho lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.2A, pp.447 - 451, 2001-02

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