Browse "RIMS Collection" by Author Yasuda, Tetsuji
Showing results 1 to 8 of 8
| Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.5, no.1, 2012-01 |
| Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sung-Hoon; Nakane, Ryosho; Urabe, Yuji; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.12, no.4, pp.621 - 628, 2013-07 |
| Formation of III-V-on-insulator structures on Si by direct wafer bonding Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sanghyeon; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.9, 2013-09 |
| Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.13, no.4, pp.456 - 462, 2013-12 |
| Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, APPLIED PHYSICS LETTERS, v.103, no.14, 2013-09 |
| Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.4, no.2, 2011-02 |
| Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, APPLIED PHYSICS LETTERS, v.100, no.19, 2012-05 |
| Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability Kim, Sanghyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.8, pp.2512 - 2517, 2013-08 |
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