Browse "RIMS Collection" by Author Yasuda, T.
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| 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density Suzuki, R.; Taoka, N.; Yokoyama, M.; Lee, S.; Kim, S. H.; Hoshii, T.; Yasuda, T.; et al, APPLIED PHYSICS LETTERS, v.100, no.13, 2012-03 |
| High mobility CMOS technologies using III-V/Ge channels on Si platform Takagi, S.; Kim, S. -H.; Yokoyama, M.; Zhang, R.; Taoka, N.; Urabe, Y.; Yasuda, T.; et al, SOLID-STATE ELECTRONICS, v.88, pp.2 - 8, 2013-10 |
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