Browse "RIMS Collection" by Author Wu Z.
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| Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe Lee S.; Jeong J.-H.; Wu Z.; Park Y.-W.; Kim W.M.; Cheong B.-K., JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.7, pp.H612 - H615, 2009 |
| The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe Park Y.-w.; Lee H.S.; Ahn H.W.; Wu Z.; Lee S.; Jeong J.-h.; Jeong D.S.; et al, CURRENT APPLIED PHYSICS, v.10, no.1, pp.E79 - E82, 2010 |
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