Showing results 1 to 11 of 11
Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates Ju, Gunwu; Kim, Hansung; Shim, Jae-Phil; Kim, Seong Kwang; Lee, Byeong-Hyeon; Won, Sung Ok; Kim, Sanghyeon; et al, THIN SOLID FILMS, v.649, pp.38 - 42, 2018-03 |
Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si Shim, Jae-Phil; Kim, Seong Kwang; Kim, Hansung; Ju, Gunwu; Lim, Heejeong; Kim, SangHyeon; Kim, Hyung-jun, APL MATERIALS, v.6, no.1, 2018-01 |
Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density Kim, Seong Kwang; Geum, Dae-Myeong; Shim, Jae-Phil; Kim, Chang Zoo; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun; et al, APPLIED PHYSICS LETTERS, v.110, no.4, 2017-01 |
Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display Kang, Chang-Mo; Kong, Duk-Jo; Shim, Jae-Phil; Kim, Sanghyeon; Choi, Sang-Bae; Lee, Jun-Yeob; Min, Jung-Hong; et al, OPTICS EXPRESS, v.25, no.3, pp.2489 - 2495, 2017-02 |
Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.9, pp.3594 - 3601, 2017-09 |
Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials Kim, Sang-Hyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Ju, Gunwu; Kim, Han-Sung; Lim, Hee-Jeong; et al, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.6, no.1, pp.579 - 587, 2018 |
Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive Bonding Kang, Chang-Mo; Lee, Jun-Yeob; Kong, Duk-Jo; Shim, Jae-Phil; Kim, Sanghyeon; Mun, Seung-Hyun; Choi, Soo-Young; et al, ACS PHOTONICS, v.5, no.11, pp.4413 - 4422, 2018-11 |
Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868, 2018-05 |
Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates Shim, Jae-Phil; Kim, Han-Sung; Ju, Gunwu; Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hyung-Jun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.3, pp.1253 - 1257, 2018-03 |
Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission Kang, Chang-Mo; Kang, Seok-Jin; Mun, Seung-Hyun; Choi, Soo-Young; Min, Jung-Hong; Kim, Sanghyeon; Shim, Jae-Phil; et al, SCIENTIFIC REPORTS, v.7, 2017-09 |
Verification of Ge-on-insulator structure for a mid-infrared photonics platform Kim, SangHyeon; Han, Jae-Hoon; Shim, Jae-Phil; Kim, Hyung-Jun; Choi, Won Jun, OPTICAL MATERIALS EXPRESS, v.8, no.2, pp.440 - 451, 2018-02 |
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