Browse "RIMS Collection" by Author J.G.Lee
Showing results 1 to 3 of 3
| Effects of Phosphorus Doping Concentration on the Oxidation Rate of Tungsten Polycide(II) - Oxidation of Unannealed Polycide C.M.Lee; S.B.Han; H.B.Im; J.G.Lee, 전기전자재료학회논문지, v.4, no.2, pp.97 - 104, 1991 |
| Effects of Thickness, Doping Concentration and Flow Rate of WF6 on the Electrical Resistivity of Tungsten Silicide Films C.M.Lee; C.S.Han; J.G.Lee; H.B.Im, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.3, pp.410, 1990 |
| Studies on the Electrical Resistance and the Behaviors of Excess Silicon of Tungsten Silicide During Oxidation Y.W.Nam; C.M.Lee; H.B.Im; J.G.Lee, 요업학회지, v.27, no.5, pp.645 - 651, 1990 |
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