Browse "RIMS Collection" by Author Cheong B.-K.
Showing results 1 to 4 of 4
| A study on the temperature dependence of characteristics of phase change memory devices Lee S.; Jeong D.S.; Jeong J.-H.; Zhe W.; Park Y.-W.; Ahn H.-W.; Kim W.M.; et al, APPLIED PHYSICS LETTERS, v.95, no.9, 2009 |
| A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5 Lee S.; Jeong D.S.; Jeong J.-H.; Zhe W.; Park Y.-W.; Ahn H.-W.; Cheong B.-K., APPLIED PHYSICS LETTERS, v.96, no.2, 2010 |
| Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio Jeong J.-H.; Lee H.S.; Lee S.; Lee T.S.; Kim W.M.; Zhe W.; Kim S.C.; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3, 2009 |
| Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe Lee S.; Jeong J.-H.; Wu Z.; Park Y.-W.; Kim W.M.; Cheong B.-K., JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.7, pp.H612 - H615, 2009 |
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