Browse "RIMS Collection" by Author Yasuda, Tetsuji
Showing results 6 to 8 of 8
| Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.4, no.2, 2011-02 |
| Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, APPLIED PHYSICS LETTERS, v.100, no.19, 2012-05 |
| Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability Kim, Sanghyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.8, pp.2512 - 2517, 2013-08 |
Discover
Type
- 4,825 Article
- 3,516 Conference
- 1,493 Patent
Open Access
- 223 OA Article
Date issued
- 1 2040 - 2041
- 1,334 2020 - 2029
- 2,943 2010 - 2019
- 2,339 2000 - 2009
- 1,846 1990 - 1999
- 81 1970 - 1979
- 3 1964 - 1969