Showing results 6 to 6 of 6
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation Kim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; et al, APPLIED PHYSICS LETTERS, v.104, no.11, 2014-03 |
Discover