Showing results 3 to 6 of 6
High I-on/I-off and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions Noguchi, Munetaka; Kim, SangHyeon; Yokoyama, Masafumi; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, JOURNAL OF APPLIED PHYSICS, v.118, no.4, 2015-07 |
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability Kim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.5, pp.1354 - 1360, 2014-05 |
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.10, pp.3342 - 3350, 2013-10 |
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation Kim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; et al, APPLIED PHYSICS LETTERS, v.104, no.11, 2014-03 |
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