DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kueck, Aaron M. | - |
dc.contributor.author | Kim, Do Kyung | - |
dc.contributor.author | Ramasse, Quentin M. | - |
dc.contributor.author | Jonghe, L. C. De | - |
dc.contributor.author | Ritchie, R. O. | - |
dc.date.accessioned | 2011-04-29T01:47:54Z | - |
dc.date.available | 2011-04-29T01:47:54Z | - |
dc.date.issued | 2011-04-29 | - |
dc.identifier.uri | http://hdl.handle.net/10203/23421 | - |
dc.description.abstract | Ultrahigh-resolution transmission electron microscopy and atomic-scale spectroscopy are used to investigate the origin of the toughness in rare-earth doped silicon carbide (RE-SiC) by examining the mechanistic nature of the intergranular cracking events which we find to occur precisely along the RE-decorated interface between the SiC grains and the nanoscale grain-boundary phase. We conclude that, for optimal toughness, the relative elastic modulus across the grain-boundary phase and the interfacial fracture toughness are the most critical material parameters; both can be altered with judicious choice of rare-earth elements. | en |
dc.description.sponsorship | This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Part of this work was carried out using the facilities at the National Center for Electron Microscopy, which is supported at the Lawrence Berkeley National Laboratory by the Department of Energy under the same contract number. D.K.K. would like to thank the SBS Foundation for supporting his sabbatical leave in Berkeley where the study was performed. | en |
dc.language.iso | en_US | en |
dc.title | Atomic-Resolution Imaging of the Nanoscale Origin of Toughness in Rare-Earth Doped SiC | en |
dc.type | Article | en |
dc.identifier.doi | 10.1021/nl8017884 | - |
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