Method of fabricating a dielectric-modulated field effect transistor comprising a biomolecules layer formed in a space where a sacrificial layer has been removed유전율-변화 전계효과 트랜지스터 및 그 제조 방법

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dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorIm, Hyungsoonko
dc.contributor.authorGu, Bonsangko
dc.date.accessioned2017-12-20T10:24:37Z-
dc.date.available2017-12-20T10:24:37Z-
dc.date.issued2011-04-19-
dc.identifier.urihttp://hdl.handle.net/10203/232388-
dc.titleMethod of fabricating a dielectric-modulated field effect transistor comprising a biomolecules layer formed in a space where a sacrificial layer has been removed-
dc.title.alternative유전율-변화 전계효과 트랜지스터 및 그 제조 방법-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorIm, Hyungsoon-
dc.contributor.nonIdAuthorGu, Bonsang-
dc.contributor.assigneeKAIST-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber12014380-
dc.identifier.patentRegistrationNumber7927887-
dc.date.application2008-01-15-
dc.date.registration2011-04-19-
dc.publisher.countryUS-
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