DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전석우 | ko |
dc.contributor.author | 백진욱 | ko |
dc.contributor.author | 이진섭 | ko |
dc.date.accessioned | 2017-12-20T08:48:20Z | - |
dc.date.available | 2017-12-20T08:48:20Z | - |
dc.date.issued | 2016-01-12 | - |
dc.identifier.uri | http://hdl.handle.net/10203/231968 | - |
dc.description.abstract | The present invention relates to the method for manufacturing high quality graphene by heating carbon-based self-assembly monolayers, comprising the steps of: forming carbon source layers which are convertible into the graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; converting the carbon source layers into the graphene layer by heating the first part of the substrate using a local heating source, wherein the carbon source layers and the metal catalyst layers are formed; converting the carbon source layers into graphene by moving the local heating source and then heating the second part which is different from the first part; and removing the metal catalyst layer. The present invention also provides a substrate comprising a graphene layer manufactured by the above method and provides applications in semiconductor devices and electronic materials using the substrate. | - |
dc.title | 탄소-계 자체 조립 단막층을 가열시킴으로써 높은 품질 그래핀을 제조하기 위한 방법 | - |
dc.title.alternative | Method for manufacturing high quality graphene by heating carbon-based self-assembly monolayers | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | 전석우 | - |
dc.contributor.nonIdAuthor | 백진욱 | - |
dc.contributor.nonIdAuthor | 이진섭 | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 14141544 | - |
dc.identifier.patentRegistrationNumber | 9233851 | - |
dc.date.application | 2013-12-27 | - |
dc.date.registration | 2016-01-12 | - |
dc.publisher.country | US | - |
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