DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이희철 | ko |
dc.contributor.author | 권일웅 | ko |
dc.contributor.author | 이용수 | ko |
dc.date.accessioned | 2017-12-20T01:43:44Z | - |
dc.date.available | 2017-12-20T01:43:44Z | - |
dc.date.issued | 2010-01-06 | - |
dc.identifier.uri | http://hdl.handle.net/10203/230000 | - |
dc.description.abstract | The present invention relates to a SON (Silicon-On-Nothing) MOSFET having a beam structure and an inverter using thereof and the method for fabricating thereof to increase the efficiency and performance of a MOSFET. A method for fabricating the SON MOSFET according to the present invention comprises the steps of (a) patterning a passivation layer on a substrate, (b) doping boron on the substrate, (c) removing the patterned passivation layer, (d) forming the beam structure on the substrate by anisotropical etching on the region not doped with boron of the substrate, (e) depositing a insulating material on the substrate having the beam structure, and (f) depositing an electrode material on the disposed insulating material. | - |
dc.title | SON MOSFET using a beam structure and method for fabricating thereof | - |
dc.title.alternative | 빔구조를 이용한 에스오앤 모스 트렌지스터 및 이를 이용한 인버터 소자 및 이들의 제조방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | 이희철 | - |
dc.contributor.nonIdAuthor | 권일웅 | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 11362244 | - |
dc.identifier.patentRegistrationNumber | 7642167 | - |
dc.date.application | 2006-02-24 | - |
dc.date.registration | 2010-01-06 | - |
dc.publisher.country | US | - |
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