DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이상국 | ko |
dc.contributor.author | Bao Lam Huu | ko |
dc.contributor.author | 김선아 | ko |
dc.contributor.author | 이정선 | ko |
dc.date.accessioned | 2017-12-20T01:42:32Z | - |
dc.date.available | 2017-12-20T01:42:32Z | - |
dc.date.issued | 2016-10-04 | - |
dc.identifier.uri | http://hdl.handle.net/10203/229960 | - |
dc.description.abstract | The present invention provides a power gain-boosting technique for an amplifier in order to compensate for the decrease of Gmag in a transistor at high frequencies. A power gain-boosting technique of the present invention comprises the steps of: finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition: embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching. | - |
dc.title | Method for high-frequency amplifier using power gain-boosting technique | - |
dc.title.alternative | 파워 획득 증폭 기술을 사용해 고주파 증폭기를 위한 방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | 이상국 | - |
dc.contributor.nonIdAuthor | Bao Lam Huu | - |
dc.contributor.nonIdAuthor | 김선아 | - |
dc.contributor.nonIdAuthor | 이정선 | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 14590253 | - |
dc.identifier.patentRegistrationNumber | 9461600 | - |
dc.date.application | 2015-01-06 | - |
dc.date.registration | 2016-10-04 | - |
dc.publisher.country | US | - |
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