DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nahm, Ho-Hyun | ko |
dc.contributor.author | Kim, Yong-Sung | ko |
dc.contributor.author | Kim, Dae Hwan | ko |
dc.date.accessioned | 2017-12-19T03:11:47Z | - |
dc.date.available | 2017-12-19T03:11:47Z | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.249, no.6, pp.1277 - 1281 | - |
dc.identifier.issn | 0370-1972 | - |
dc.identifier.uri | http://hdl.handle.net/10203/228683 | - |
dc.description.abstract | The excited holes occupying the valence band tail (VBT) states in amorphous oxide semiconductors (AOS) are found to induce formation of meta-stable O-2(2-) peroxide defects. The VBT states are at least partly characterized by the O-O pp sigma* molecular orbital, and the localized-hole-mediated lattice instability results in the formation of the peroxide defects. Along with the O-O bond formation, the pp sigma* state is heightened up into the conduction bands, and two electrons are accordingly doped in the electronic ground state. The energy barrier from the O-2(2-) peroxide state to the normal disorder state is found to be 0.97eV in hybrid density functional theory. The hole-mediated formation of the meta-stable peroxide defects and their meta-stability is suggested as an origin of the negative bias and/or illumination stress instability in AOS. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | AUGMENTED-WAVE METHOD | - |
dc.subject | GA-ZN-O | - |
dc.subject | BIAS STABILITY | - |
dc.subject | TFTS | - |
dc.subject | FABRICATION | - |
dc.title | Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state | - |
dc.type | Article | - |
dc.identifier.wosid | 000305071800031 | - |
dc.identifier.scopusid | 2-s2.0-84862229103 | - |
dc.type.rims | ART | - |
dc.citation.volume | 249 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1277 | - |
dc.citation.endingpage | 1281 | - |
dc.citation.publicationname | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | - |
dc.identifier.doi | 10.1002/pssb.201147557 | - |
dc.contributor.localauthor | Nahm, Ho-Hyun | - |
dc.contributor.nonIdAuthor | Kim, Yong-Sung | - |
dc.contributor.nonIdAuthor | Kim, Dae Hwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | amorphous oxide semiconductors | - |
dc.subject.keywordAuthor | density-functional theory | - |
dc.subject.keywordAuthor | instability | - |
dc.subject.keywordAuthor | InGaZnO4 | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | BIAS STABILITY | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordPlus | FABRICATION | - |
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