DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nahm, Ho-Hyun | ko |
dc.contributor.author | Kim, Yong-Sung | ko |
dc.date.accessioned | 2017-12-19T03:11:43Z | - |
dc.date.available | 2017-12-19T03:11:43Z | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.issued | 2013-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.102, no.15 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/228680 | - |
dc.description.abstract | Transparent amorphous oxide semiconductors (TAOS's) are of practical importance for applications including oxide electronics and displays. Here we show the lone-pair s-electrons incorporated by for example Sb-doping can suppress the hole-induced lattice instability, which has been a major obstacle to commercial application of the TAOS-based thin film transistors. The Sb(III)-O sp sigma* hybridization in the top-most valence states makes the lone-pair s-electrons to capture the excited holes, the Sb(V)O-6 octahedral bonding configuration by which formed is easily dissociated into the stable lone-pair Sb(III) state by recapturing conduction electrons. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4801931] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | TOTAL-ENERGY CALCULATIONS | - |
dc.subject | WAVE BASIS-SET | - |
dc.subject | GA-ZN-O | - |
dc.subject | OXIDE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | TRANSPARENT | - |
dc.subject | TFTS | - |
dc.subject | STABILITY | - |
dc.subject | STRESS | - |
dc.title | Role of lone-pair electrons in Sb-doped amorphous InGaZnO4: Suppression of the hole-induced lattice instability | - |
dc.type | Article | - |
dc.identifier.wosid | 000318269200032 | - |
dc.identifier.scopusid | 2-s2.0-84877137518 | - |
dc.type.rims | ART | - |
dc.citation.volume | 102 | - |
dc.citation.issue | 15 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4801931 | - |
dc.contributor.localauthor | Nahm, Ho-Hyun | - |
dc.contributor.nonIdAuthor | Kim, Yong-Sung | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | WAVE BASIS-SET | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | STRESS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.